unisonic technologies co., ltd 4n40 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2011 unisonic technologies co., ltd qw-r502-550.b 4a, 400v n-channel power mosfet ? description the utc 4n40 is an n-channel mode power mosfet using utc? s advanced technology to provide customers with planar stripe and dmos technology. this technology specializes in allowing a minimum on-state resistance and supe rior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 4n40 is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply. ? features * high switching speed * r ds(on) =1.5 ? @ v gs =10v * 100% avalanche tested ? symbol 1.gate 3.source 2.drain to-220 to-220f 1 1 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 4n40l-ta3-t 4n40g-ta3-t to-220 g d s tube 4n40l-tf3-t 4N40G-TF3-T to-220f g d s tube note: pin assignment: g: gate d: drain s: source
4n40 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-550.b ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 400 v gate-source voltage v gss 30 v continuous (t c =25c) i d 4 a drain current pulsed (note 1) i dm 8 a peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns to-220 60 w power dissipation to-220f 27 w to-220 0.48 w/c derate above 25c to-220f p d 0.22 w/c junction temperature t j +150 c storage temperature t stg -55~+150 c note: absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w to-220 2.08 junction to case to-220f jc 4.5 c/w ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 400 v drain-source leakage current i dss v ds =400v, v gs =0v 1 a forward v gs =+30v, v ds =0v +100 na gate- source leakage current reverse i gss v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d =4a 1.2 1.5 ? dynamic parameters input capacitance c iss 750 pf output capacitance c oss 150 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 100 pf switching parameters turn-on delay time t d(on) 12 45 ns rise time t r 42 60 ns turn-off delay time t d(off) 130 200 ns fall-time t f v dd =200v, i d =4a, r g =25 ? (note 2, 3) 62 100 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =2a, v gs =0v 1.4 v body diode reverse recovery time t rr i s =4a, v gs =0v, di f /dt=100a/s(note 2) 800 ns notes: 1. repetitive rating: pulse widt h limited by maximum junction temperature 2. pulse test: pulse width 300s, duty cycle 2% 3. essentially independent of operating temperature
4n40 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-550.b ? test circuits and waveforms utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
